ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,673, issued on Oct. 7, was assigned to IMEC VZW (Leuven, Belgium).
"Split gate FerroFET" was invented by Jan Van Houdt (Bekkevoort, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a ferroelectric field-effect transistor comprising: a substrate comprising a source region, a channel, and a drain region; a ferroelectric material arranged on a first portion of the channel and a portion of the drain region; a program gate arranged on the ferroelectric material and being at least coextensive with the first portion of the channel; a gate dielectric arranged on a portion of the source region and a second portion of the ...