ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,785, issued on Oct. 28, was assigned to Imec vzw (Leuven, Belgium).
"Method for forming a stacked FET device" was invented by Boon Teik Chan (Wilsele, Belgium), Anne Vandooren (Mazy, Belgium) and Naoto Horiguchi (Leuven, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a stacked field-effect transistor device is provided. The method including: forming a bottom FET device comprising a bottom gate electrode arranged; forming a bonding layer of dielectric bonding material over the bottom FET device; and forming a top FET device on the bonding layer, including: forming a fin structure comprising a channel layer; etching throug...