ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,429, issued on Oct. 21, was assigned to IMEC VZW (Leuven, Belgium).
"Interconnection structure for a semiconductor device" was invented by Zheng Tao (Heverlee, Belgium) and Stefan Decoster (Bertem, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an interconnection structure for a semiconductor device and an interconnection structure is disclosed. The method includes forming a conductive layer on an insulating layer and etching the conductive layer to form a first conductive line. Thereafter, a spacer is formed on a side wall of a first end portion of the first conductive line. The method further includes forming a second ...