ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,246, issued on Oct. 14, was assigned to IMEC VZW (Leuven, Belgium).
"Field-effect transistor device" was invented by Aryan Afzalian (Chastre, Belgium), Julien Ryckaert (Schaerbeek, Belgium) and Naoto Horiguchi (Leuven, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A FET device (100) is provided, the FET device including a substrate (102), a source body (120), a drain body (130) and a set of vertically spaced apart channel layers (150) extending between the source and drain body in a first direction along the substrate (102), the source body (120) comprising a common source body portion (122) arranged at a first lateral side of the set of ch...