ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,805, issued on Nov. 4, was assigned to IMEC VZW (Leuven, Belgium).
"Method for forming an interconnection structure" was invented by Gaspard Hiblot (Leuven, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an interconnection structure for a first transistor and a second transistor is provided. The first transistor includes a horizontally extending first channel portion and the second transistor includes a horizontally extending second channel portion. The channel portions are stacked above each other on a substrate. The method includes forming a conductive line extending beside and below the second channel portion, forming,...