US Patent Issued to Imec VZW on Nov. 4 for "Free-layer design for a voltage control of magnetic anisotropy magnetic random access memory device" (Belgian Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,859, issued on Nov. 4, was assigned to Imec VZW (Leuven, Belgium).

"Free-layer design for a voltage control of magnetic anisotropy magnetic random access memory device" was invented by Robert Carpenter (Kessel-lo, Belgium), Woojim Kim (Watermael-Boitsfort, Belgium) and Kiroubanand Sankaran (Herent, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides improved VCMA MRAM devices that include an engineered magnetic structure. The disclosure also presents the engineered magnetic structure, which includes a magnetic reference layer, a tunnel barrier layer provided on the magnetic reference layer, an interface layer provid...