US Patent Issued to IMEC VZW on Nov. 25 for "Method for forming a stacked transistor device" (Belgian Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,289, issued on Nov. 25, was assigned to IMEC VZW (Leuven, Belgium).

"Method for forming a stacked transistor device" was invented by Boon Teik Chan (Wilsele, Belgium), Naoto Horiguchi (Leuven, Belgium) and Julien Ryckaert (Schaerbeek, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for forming a stacked transistor device comprising a lower NSHFET structure and an upper FinFET structure including: forming a fin structure comprising: a lower device sub-stack comprising a number of lower channel nanosheets, a middle insulating layer, an upper device sub-stack comprising an upper channel layer, and a cap...