ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,175, issued on June 3, was assigned to IMEC VZW (Leuven, Belgium).
"FET device and a method for forming a FET device" was invented by Julien Ryckaert (Schaerbeek, Belgium), Naoto Horiguchi (Leuven, Belgium) and Boon Teik Chan (Wilsele, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an aspect there is provided a FET device. The FET device comprises a common source body portion and a set of source layer prongs protruding therefrom in a first lateral direction. First dielectric layer portions are arranged in spaces between the source layer prongs. The device further comprises a common drain body portion and a set of drain layer pron...