ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,229, issued on Jan. 13, was assigned to IMEC VZW (Leuven, Belgium).

"Thermally stable spin orbit torque layer for an MRAM device" was invented by Jose Diogo Costa (Heverlee, Belgium), Sebastien Couet (Grez-Doiceau, Belgium), Geoffrey Pourtois (Villers-la-Ville, Belgium) and Benoit Van Troeye (Nivelles, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to spin orbit torque (SOT) magnetic random access (MRAM) devices. A magnetic structure for a SOT-MRAM device and a method for fabricating the magnetic structure are presented. The magnetic structure comprises a SOT layer and a magnetic tunnel junction (MTJ) structure arrange...