US Patent Issued to Imec vzw on Jan. 13 for "Method for forming a stacked FET device" (Belgian Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,079, issued on Jan. 13, was assigned to Imec vzw (Leuven, Belgium).

"Method for forming a stacked FET device" was invented by Boon Teik Chan (Wilsele, Belgium), Dunja Radisic (Heverlee, Belgium), Anne Vandooren (Mazy, Belgium) and Juergen Boemmels (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example embodiments relate to methods for forming a stacked FET device. An example method includes forming a bottom FET device that includes a source, a drain, at least one channel layer between the source and drain, and a bottom gate electrode arranged along the at least one channel layer. The method also includes forming a bonding layer ov...