ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,935, issued on Dec. 30, was assigned to Imec VZW (Leuven, Belgium).
"III-V semiconductor device" was invented by Benoit Bakeroot (Ghent, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A III-V device and a method for forming the device is provided. The III-V FET device includes: a device layer stack including in a bottom-up direction: a drain layer of n-type GaN, a drift layer of n-type GaN, a channel layer of p-type GaN, and a source layer; a gate extending in a top-down direction into the device layer stack and through the channel layer; and a source contact in contact with the source layer and a drain contact in contact with the drain laye...