ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,878, issued on Dec. 30, was assigned to Imec VZW (Leuven, Belgium).
"Bit cell with isolating wall" was invented by Hsiao-Hsuan Liu (Leuven, Belgium), Shairfe Muhammad Salahuddin (Kessel-Lo, Belgium) and Boon Teik Chan (Wilsele, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A bit cell for a Static Random-Access Memory (SRAM) is provided that includes a first and second pair of complementary transistors as well as a first pass-gate transistor and a second pass-gate transistor. A first inverter gate electrode forms a common gate electrode for the first pair of complementary transistors and a second inverter gate electrode forms a common gate e...