US Patent Issued to IMEC VZW on Aug. 5 for "Method of manufacturing an interconnection structure for a semiconductor device having a spacer separating first and second conductive lines" (Belgian Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,116, issued on Aug. 5, was assigned to IMEC VZW (Leuven, Belgium).

"Method of manufacturing an interconnection structure for a semiconductor device having a spacer separating first and second conductive lines" was invented by Zheng Tao (Heverlee, Belgium) and Stefan Decoster (Bertem, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an interconnection structure (10) for a semiconductor device is disclosed, wherein a first conductive layer is etched to form a set of third conductive lines (113) above a first and second conductive line (101, 108). At least one of the third conductive lines comprises a contacting portion formin...