US Patent Issued to Imec vzw on Aug. 19 for "Method for producing an undercut in a 300mm silicon-on-insulator platform" (Belgian Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,665, issued on Aug. 19, was assigned to Imec vzw (Leuven, Belgium).

"Method for producing an undercut in a 300mm silicon-on-insulator platform" was invented by Didit Yudistira (Kessel-Lo, Belgium) and Alexey Milenin (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Silicon on Insulator (SOI) structure and a method for creating an undercut (UCUT) in an SOI structure, in particular, for a 300 mm SOI platform, is provided. In particular, the method includes fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure by performing a first dry etch of the silicon substrate to create the one...