ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,086, issued on April 15, was assigned to IMEC VZW (Leuven, Belgium) and Katholieke Universiteit Leuven (Leuven, Belgium).

"Pattern height metrology using an e-beam system" was invented by Gian Francesco Lorusso (Overijse, Belgium), Mohamed Saib (Evere, Belgium), Alain Moussa (Genval, Belgium), Anne-Laure Charley (Hamme-Mille, Belgium), Danilo De Simone (Leuven, Belgium) and Joren Severi (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by...