US Patent Issued to IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY on March 4 for "P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D barrier" (Saudi Arabia Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,928, issued on March 4, was assigned to IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY (Riyadh, Saudi Arabia).

"P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D barrier" was invented by Ghada A. Khouqeer (Riyadh, Saudi Arabia), Arihant Raj Siddarth (Riyadh, Saudi Arabia), Gaurav Jayaswal (Riyadh, Saudi Arabia), Rahul Sharma (Riyadh, Saudi Arabia), Yogita Sharma (Riyadh, Saudi Arabia), Priya Kaushal (Riyadh, Saudi Arabia), Gargi Khanna (Riyadh, Saudi Arabia), Tahani A. Alrebdi (Riyadh, Saudi Arabia) and Abdullah N. Alodhayb (Riyadh, Saudi Arabia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bandgap tuneable p-GaN high electron mobility...