US Patent Issued to Illinois Institute of Technology on Oct. 7 for "Thermal atomic layer deposition of ternary gallium oxide thin films" (Illinois Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,415, issued on Oct. 7, was assigned to Illinois Institute of Technology (Chicago).

"Thermal atomic layer deposition of ternary gallium oxide thin films" was invented by Adam Hock (Chicago) and Michael James Foody (Chicago).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method of a thermal atomic layer deposition (ALD) process of depositing a ternary gallium oxide thin film, which includes gallium, a metal element other than gallium, and oxygen. The disclosed method starts with providing a reactive surface. Next, one or more ALD growth cycles are conducted. Each ALD growth cycle includes one or more first ALD sub-cycl...