US Patent Issued to II-VI ADVANCED MATERIALS on Nov. 18 for "Crystal efficient SiC device wafer production" (Swedish Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,149, issued on Nov. 18, was assigned to II-VI ADVANCED MATERIALS LLC (Pine Brook, N.J.).

"Crystal efficient SiC device wafer production" was invented by Adolf Schoner (Hasselby, Sweden) and Sergey Reshanov (Upplands Vasby, Sweden).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a method for manufacturing a SiC device wafer comprising the steps: a) slicing and polishing a SiC boule to thicker substrates compared to the usual thickness in the prior art, b) creating a device wafer on the substrate, c) removing the device wafer from the remaining substrate, d) adding SiC to the remaining substrate so that the original thickness of the su...