ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,420,257, issued on Sept. 23, was assigned to IFP ENERGIES NOUVELLES (Rueil Malmaison, France).
"Silicon trapping mass" was invented by Nicolas Legagneux (Rueil Malmaison, France), Marie-Claire Marion (Rueil Malmaison, France), Karin Barthelet (Rueil Malmaison, France), Patrick Euzen (Rueil Malmaison, France) and Joseph Lopez (Rueil Malmaison, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a mass for trapping silicon compounds, comprising a porous alumina-based support and at least one metal chosen from the metals from groups VIB and VIIIB, and exhibiting a grain density of at least 1.20 g/ml, a specific surface o...