US Patent Issued to IDEADED on June 10 for "Vertical field effect device and method of manufacturing" (Spanish Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,895, issued on June 10, was assigned to IDEADED S.L. (Viladecans, Spain).

"Vertical field effect device and method of manufacturing" was invented by Jemish Mahendrabhai Parmar (Viladecans, Spain), Guillermo Albareda Piquer (Viladecans, Spain) and Eduard Puig Marti (Viladecans, Spain).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to vertical field effect transistors (FET). The vertical FET according to the invention includes a substrate (101) and a first electrode (102) configured as either a source or a drain of the transistor. The device includes a second electrode (104) configured as the other of the source and the d...