US Patent Issued to IceMOS Technology on Jan. 13 for "Semiconductor device and method of forming charge balanced power MOSFET combining field plate and super-junction" (Japanese, American Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,043, issued on Jan. 13, was assigned to IceMOS Technology Ltd. (Great Britain).

"Semiconductor device and method of forming charge balanced power MOSFET combining field plate and super-junction" was invented by Takeshi Ishiguro (Fukushima, Japan), Aymeric Privat (Tempe, Ariz.) and Samuel J. Anderson (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a substrate and semiconductor layer formed over the substrate. A trench is formed through the semiconductor layer. A polysilicon material is disposed in the trench. A first column of semiconductor material having a first conductivity type extends through the semicondu...