ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,879, issued on June 10, was assigned to HYUNDAI MOTOR COMPANY (Seoul, South Korea) and KIA Corp. (Seoul, South Korea).

"Method for manufacturing a two-terminal memory device" was invented by Ui-Yeon Won (Ansan-si, South Korea), Jong-Seok Lee (Suwon-si, South Korea) and Sang-Hyeok Yang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a two-terminal memory device includes: forming an extended drain and a drain layer on a substrate; forming a ferroelectric layer covering the substrate and the extended drain; forming a semiconducting layer on the ferroelectric layer, and forming a source layer connected to...