US Patent Issued to HYUNDAI MOBIS on Nov. 25 for "Power semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,271, issued on Nov. 25, was assigned to HYUNDAI MOBIS Co. LTD. (Seoul, South Korea).

"Power semiconductor device and method for fabricating the same" was invented by Sin A Kim (Yongin-si, South Korea), Tae Yeop Kim (Yongin-si, South Korea), Jeong Mok Ha (Yongin-si, South Korea), Dong Hwan Choi (Yongin-si, South Korea) and Hyuk Woo (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes an SiC semiconductor layer, a plurality of well regions disposed in the semiconductor layer such that two adjacent well regions at least partially make contact with each other, a plurality of source regions on the p...