US Patent Issued to Hyundai Mobis on Dec. 30 for "Power semiconductor device, power semiconductor chip including the same, and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,927, issued on Dec. 30, was assigned to Hyundai Mobis Co. Ltd. (Seoul, South Korea).

"Power semiconductor device, power semiconductor chip including the same, and method for manufacturing the same" was invented by Seon Hyeong Jo (Yongin-si, South Korea), Hyuk Woo (Yongin-si, South Korea), Tae Young Park (Yongin-si, South Korea), Ju Hwan Lee (Yongin-si, South Korea), Min Gi Kang (Yongin-si, South Korea), Seong Hwan Yun (Yongin-si, South Korea) and Tae Yang Kim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a power semiconductor device that includes a gate electrode recessed from a first surface of a semiconductor ...