ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,339, issued on Aug. 26, was assigned to Hyundai Mobis Co. Ltd. (Seoul, South Korea).

"Power semiconductor device, power semiconductor chip including the same, and method for manufacturing the same" was invented by Min Gi Kang (Yongin-si, South Korea), Hyuk Woo (Yongin-si, South Korea), Tae Young Park (Yongin-si, South Korea), Ju Hwan Lee (Yongin-si, South Korea), Seon Hyeong Jo (Yongin-si, South Korea), Seong Hwan Yun (Yongin-si, South Korea) and Tae Yang Kim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a plurality of gate electrodes configured to be recessed from a first surface of a s...