US Patent Issued to HUNAN SAN'AN SEMICONDUCTOR on Oct. 21 for "Semiconductor device with low potential terminals connected to wells" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,183, issued on Oct. 21, was assigned to HUNAN SAN'AN SEMICONDUCTOR Co. LTD. (Hunan, China).

"Semiconductor device with low potential terminals connected to wells" was invented by Wenbi Cai (Xiamen, China), Cheng Liu (Xiamen, China), Nien-Tze Yeh (Xiamen, China), Yuci Lin (Xiamen, China), Jie Zhao (Xiamen, China), Yuyu Liang (Xiamen, China) and Jian Yang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a substrate, at least two doped well regions, an epitaxial structure, and at least two power elements. The doped well regions are disposed in the substrate, and are spaced apart from each other. Each of th...