US Patent Issued to HUNAN SAN'AN SEMICONDUCTOR on May 6 for "Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,162, issued on May 6, was assigned to HUNAN SAN'AN SEMICONDUCTOR Co. LTD. (Hunan, China).

"Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same" was invented by Boting Liu (Xiamen, China), Yutao Fang (Xiamen, China), Shuai Chen (Xiamen, China), Nientze Yeh (Xiamen, China) and Fuchin Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes a plurality o...