US Patent Issued to HUNAN GREAT-LEO MICROELECTRONICS on Nov. 25 for "FLASH-SAR ADC conversion method and circuit" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,483,262, issued on Nov. 25, was assigned to HUNAN GREAT-LEO MICROELECTRONICS Co. LTD. (Hunan, China).

"FLASH-SAR ADC conversion method and circuit" was invented by Huan Deng (Hunan, China), Chaofeng Zhu (Hunan, China), Jinbo Tang (Hunan, China), Yanggui Luo (Hunan, China), Chaoxiong Dai (Hunan, China), Rui Long (Hunan, China), Guangyao Li (Hunan, China) and Guangqiang Yan (Hunan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A FLASH-SAR ADC conversion method comprises: at a sampling stage of a FLASH-SAR ADC, sampling an input signal by a SAR ADC module, and at the same time, performing amplification, comparison and high-bit coarse quantization on...