US Patent Issued to HUNAN CHNTEK SENSOR TECHNOLOGY on April 29 for "Rotating multi-segment thin-film pressure sensor and arrangement method" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,250, issued on April 29, was assigned to HUNAN CHNTEK SENSOR TECHNOLOGY Co. LTD. (Changsha, China).

"Rotating multi-segment thin-film pressure sensor and arrangement method" was invented by Guoqiu Wang (Changsha, China), Jian Huang (Changsha, China) and Cui Chen (Changsha, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film pressure sensor and an arrangement method thereof are provided. The thin-film pressure sensor includes a flat diaphragm and a first induction unit in the shape of a thin film arranged on the flat diaphragm, where the first induction unit includes m rotating multi-segment resistance wires arranged around the center of ...