US Patent Issued to Huizhou China Star Optoelectronics Display, Shenzhen China Star Optoelectronics Semiconductor Display Technology on July 1 for "Transistor and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,583, issued on July 1, was assigned to Huizhou China Star Optoelectronics Display Co. Ltd. (Huizhou, China) and Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd. (Shenzhen, China).

"Transistor and manufacturing method thereof" was invented by Lixuan Chen (Huizhou, China) and Weiran Cao (Huizhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a manufacturing method of a transistor, including: providing a substrate, a solution, an active layer material and an auxiliary electrode; the active layer material is dispersed in the solution, and the active layer material is charged; positionin...