US Patent Issued to Hubei University on May 13 for "P-type gallium oxide film, and preparation method and application thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,527, issued on May 13, was assigned to Hubei University (Wuhan, China).

"P-type gallium oxide film, and preparation method and application thereof" was invented by Yunbin He (Wuhan, China), Zhouyang Luo (Wuhan, China), Daotian Shi (Wuhan, China), Yinmei Lu (Wuhan, China), Mingkai Li (Wuhan, China), Jian Chen (Wuhan, China) and Lufeng Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a p-type gallium oxide film is provided. An MxGa1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MxGa1-xN clusters, where M is selected from the gro...