US Patent Issued to HUBEI SAN'AN OPTOELECTRONICS on Oct. 14 for "Light-emitting structure and light-emitting device including the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,363, issued on Oct. 14, was assigned to HUBEI SAN'AN OPTOELECTRONICS Co. LTD. (Ezhou, China).

"Light-emitting structure and light-emitting device including the same" was invented by Zheng Wu (Xiamen, China), Chia-En Lee (Xiamen, China) and Chen-Ke Hsu (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a light-emitting structure including a light-emitting diode and a connecting unit. The light-emitting diode includes an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The connecting uni...