US Patent Issued to HUBEI SAN'AN OPTOELECTRONICS on July 22 for "Light-emitting structure, method for producing the light-emitting structure, and light-emitting device" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,433, issued on July 22, was assigned to HUBEI SAN'AN OPTOELECTRONICS Co. LTD. (Hubei, China).

"Light-emitting structure, method for producing the light-emitting structure, and light-emitting device" was invented by Shuiqing Li (Xiamen, China), Weihua Du (Xiamen, China), Chaohsu Lai (Xiamen, China) and Heqing Deng (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods incl...