US Patent Issued to HUBEI SAN'AN OPTOELECTRONICS on Feb. 10 for "Micro light-emitting diode and light-emitting device including the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,489, issued on Feb. 10, was assigned to HUBEI SAN'AN OPTOELECTRONICS Co. LTD. (Hubei, China).

"Micro light-emitting diode and light-emitting device including the same" was invented by Shuiqing Li (Xiamen, China), Weihua Du (Xiamen, China), Chaohsu Lai (Xiamen, China) and Heqing Deng (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional laye...