US Patent Issued to Huazhong University of Science and Technology on Sept. 9 for "Method for operating a dynamic memory structure having a write gating device, a read gating device, and a capacitor" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,612, issued on Sept. 9, was assigned to Huazhong University of Science and Technology (Wuhan, China).

"Method for operating a dynamic memory structure having a write gating device, a read gating device, and a capacitor" was invented by Hao Tong (Wuhan, China), Binhao Wang (Wuhan, China) and Xiangshui Miao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a dynamic memory structure and an operating method thereof. The dynamic memory structure includes a write gating device, a read gating device, and a capacitor. A first terminal of the write gating device, a first terminal of the read gating device, and a first terminal of the...