US Patent Issued to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY on May 27 for "Three-dimensional 1S1C memory based on ring capacitor and preparation method" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,522, issued on May 27, was assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hubei, China).

"Three-dimensional 1S1C memory based on ring capacitor and preparation method" was invented by Hao Tong (Hubei, China), Binhao Wang (Hubei, China), Shaojie Long (Hubei, China) and Xiangshui Miao (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention discloses a three-dimensional 1S1C memory based on a ring capacitor and a preparation method. The memory includes: a horizontal peripheral electrode layer including a first dielectric layer and a first metal electrode layer alternately stacked and grown on a substrate and provided with...