US Patent Issued to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY on March 18 for "With low density change, phase-change memory and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,651, issued on March 18, was assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hubei, China).

"With low density change, phase-change memory and preparation method therefor" was invented by Xiaomin Cheng (Hubei, China), Jinlong Feng (Hubei, China), Ming Xu (Hubei, China), Meng Xu (Hubei, China) and Xiangshui Miao (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A superlattice phase-change thin film with a low density change, a phase-change memory and a preparation method. The superlattice phase-change thin film includes first phase-change layers (7) and second phase-change layers (8) that are alternately stacked to form a period...