ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,314, issued on July 29, was assigned to Huazhong University of Science and Technology (Wuhan, China).

"Method for threshold switch device, threshold switch device, and dynamic memory" was invented by Hao Tong (Wuhan, China), Binhao Wang (Wuhan, China) and Xiangshui Miao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a design method for a threshold switch device, a threshold switch device, and a dynamic memory, relating to the technical field of memories. The design method includes: testing a hold voltage, a low-resistance-state (LRS) resistance, and a threshold voltage of a threshold switch function layer; determining a tar...