ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,536, issued on Nov. 11, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).
"Memory and electronic device" was invented by Qing Qin (Shenzhen, China), Xue Zhou (Shenzhen, China) and Xi Liu (Shenzhen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An example memory includes a plurality of storage units and bit lines distributed in an array in a storage area of the memory, where each of the storage unit includes a transistor and a magnetic tunnel junction (MTJ) element connected to the transistor. The MTJ element is disposed on a current transmission path between a source or a drain of the transistor and the bit line. The MTJ element...