US Patent Issued to Huawei Technologies on Nov. 11 for "Field effect transistor and preparation method thereof, and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,331, issued on Nov. 11, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).

"Field effect transistor and preparation method thereof, and semiconductor structure" was invented by Wen Yin (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor and a preparation method thereof, and a semiconductor structure are provided. An example field effect transistor includes: a substrate structure, a source, a drain, and a gate. The source and the drain are arranged on the substrate structure in a first direction, and a channel region is formed between the source and the drain. A channel layer is formed in the channel...