US Patent Issued to Huawei Technologies on March 18 for "Semiconductor laser with a mode expansion layer" (Texas Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,440, issued on March 18, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).

"Semiconductor laser with a mode expansion layer" was invented by Ning Cheng (Plano, Texas), Xiang Liu (Plano, Texas) and Frank Effenberger (Frisco, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within...