US Patent Issued to Huawei Technologies on March 18 for "Method for using NAND flash memory SRAM in solid state drive controller" (California Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,201, issued on March 18, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).

"Method for using NAND flash memory SRAM in solid state drive controller" was invented by Jea Woong Hyun (Los Altos, Calif.), Chun Liu (San Jose, Calif.), Chaohong Hu (San Jose, Calif.) and Xin Liao (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Write operation and garbage collection methods are provided for a Solid State Drive (SSD) controller of a SSD having Not-AND (NAND) flash memory devices with on-die Static Random Access Memory (SRAM) and NAND flash memory. In the write operation method, a received block of data is stored in on-die SRAM...