ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,373, issued on July 22, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).
"Composite substrate, composite substrate preparation method, semiconductor device, and electronic device" was invented by Bo Gao (Dongguan, China), Boning Huang (Dongguan, China) and Yuxi Wan (Dongguan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of this application relate to the field of semiconductor technologies, and provide composite substrate that comprises: a first silicon carbide layer comprising monocrystalline silicon carbide, and a second silicon carbide layer bonded to the first silicon carbide layer, wherein defect density of at ...