ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,082, issued on July 22, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).
"IGBT chip integrating temperature sensor" was invented by Boning Huang (Dongguan, China), Wentao Yang (Dongguan, China) and Junhe Wang (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The technology of this disclosure relates to an IGBT chip integrating a temperature sensor, and relates to the field of power device technologies, to improve accuracy of temperature monitoring of the IGBT chip. The IGBT chip integrating the temperature sensor includes a cell region, an emitter pad, a gate pad, a gate finger structure, a temperature sensing module, and a co...