US Patent Issued to Huawei Technologies'Co., 'Ltd.' on Jan. 13 for "Semiconductor device, and related module, circuit, and preparation method" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,045, issued on Jan. 13, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).

"Semiconductor device, and related module, circuit, and preparation method" was invented by Wentao Yang (Shanghai), Loucheng Dai (Shanghai), Chaofan Song (Shanghai), Huiling Zuo (Shenzhen, China), Jiang Du (Dongguan, China), Zhaozheng Hou (Dongguan, China) and Boning Huang (Dongguan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector laye...