ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,764, issued on Jan. 27, was assigned to Hua Hsu Advanced Technology Co. Ltd. (Taichung, Taiwan).
"Method for wafer treatment" was invented by Muh-Gueng Jenq (Taichung, Taiwan), Yung-Hsiang Lin (Taichung, Taiwan) and Thi-Yen Thu Le (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for wafer treatment is disclosed. A wafer is provided with a main surface, a surface layer, and a base layer. The surface layer is disposed between the main surface and the base layer, and the surface layer covers the base layer and exposes the main surface. Then, at least one laser process is performed to fully irradiate the main surface and the sur...