ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,719, issued on Oct. 7, was assigned to Hua Hong Semiconductor (Wuxi) Ltd. (Wuxi, China).
"CMOS image sensor" was invented by Liusuo Cheng (Wuxi, China), Guanglong Chen (Wuxi, China), Han Wang (Wuxi, China), Jiliang Zhang (Wuxi, China) and Jiangyong Qian (Wuxi, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS image sensor, a first dielectric layer is formed on a first surface of a semiconductor substrate, and a plurality of lower microlenses having a bottom surface in the shape of an arc concave structure and located directly above the corresponding photodiode are formed in the first dielectric layer. A plurality of upper microlenses having...