US Patent Issued to Hua Hong Semiconductor (Wuxi) on Dec. 16 for "Method for making deep trench isolation of CIS device, and semiconductor device structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,116, issued on Dec. 16, was assigned to Hua Hong Semiconductor (Wuxi) Ltd. (Shanghai).

"Method for making deep trench isolation of CIS device, and semiconductor device structure" was invented by Jialong Li (Wuxi, China), Peng Huang (Wuxi, China), Xiao Fan (Wuxi, China) and Wensheng Qian (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a deep trench isolation of a CIS device includes: growing a first epitaxial layer on a substrate; forming a hard mask layer on the first epitaxial layer; performing photolithography and etching processes to form deep trenches arranged longitudinally and transversely in the first epitaxial...