ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,178, issued on June 3, was assigned to HRL LABORATORIES LLC (Malibu, Calif.).
"Lateral fin static induction transistor" was invented by Biqin Huang (Torrance, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Presented is a lateral fin static induction transistor including a semi conductive substrate, source and drain regions extending from an optional buffer layer of same or varied thickness supported by the semi conductive substrate, a semi conductive channel electrically coupling the source region to the drain region of the transistor, a portion of the semi conductive channel being a fin and having a face covered by a gated structure, thereby ...