US Patent Issued to HRL LABORATORIES on Feb. 18 for "Self-passivated nitrogen-polar III-nitride transistor" (California Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,702, issued on Feb. 18, was assigned to HRL LABORATORIES LLC (Malibu, Calif.).

"Self-passivated nitrogen-polar III-nitride transistor" was invented by Daniel Denninghoff (Malibu, Calif.), Andrea Corrion (Malibu, Calif.), Fevzi Arkun (Malibu, Calif.) and Micha Fireman (Malibu, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively c...